Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD743 2SD743A
DESCRIPTION ·
·With
·Complement to type 2SB703/703A
APPLICATIONS
·Designed for use in audio frequency power
PINNING
TO-220C package
amplifier ,low speed switching applications
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Maximum absolute ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 4 A
ICM Collector current-Peak 6 A
IB Base current 1 A
PC Collector power dissipation
Collector-base voltage Open emitter 100 V
2SD743 80
Collector-emitter voltage
2SD743A
Emitter-base voltage Open collector 5 V
Open base
T
=25℃
C
V
100
40 W
Tj Junction temperature 150
T
Storage temperature -50~150
stg
THERMAL CHARACTERISTICS
SYMBOL CHARACTERISTICS MAX UNIT
Rθjc Thermal resistance junction to case 3.125 ℃/W
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD743 2SD743A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter
breakdown voltage
Collector-base breakdown voltage IC=1.0mA; IE=0 100 V
Emitter-base breakdown voltage IE=1.0mA; IC=0 5 V
Collector-emitter saturation voltage IC=3A; IB=0.3A 2.0 V
Base-emitter saturation voltage IC=3A; IB=0.3A 2.0 V
Collector cut-off current VCB=80V; IE=0 10 μA
Emitter cut-off current VEB=3V; IC=0 10 μA
DC current gain IC=20mA ; VCE=5V 20
DC current gain IC=0.5A ; VCE=5V 40 200
2SD743 80
2SD743A
IC=10mA; IB=0
100
V
fT Transition frequency IC=0.1A ; VCE=5V;f=1.0MHz 10 MHz
h
Classifications
FE-2
S R Q
40-80 60-120 100-200
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD743 2SD743A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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