Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD733 2SD733K
DESCRIPTION
·With TO-3 package
·Complement to type 2SB697/697K
·High power dissipation
APPLICATIONS
·Power amplifier applications
·Recommended for high-power high-fidelity
audio frequency amplifier output stage
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SD733 160
V
CBO
V
CEO
V
EBO
IC Collector current 12 A
Collector-base voltage
2SD733K
2SD733 140
Collector-emitter voltage
2SD733K
Emitter-base voltage Open collector 6 V
Open emitter
Open base
V
180
V
160
ICM Collector current-peak 20 A
T
PC Collector power dissipation
Tj Junction temperature 150
T
Storage temperature -40~150
stg
=25℃
C
100 W
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD733 2SD733K
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2SD733 140
V
(BR)CEO
V
(BR)CBO
Collector-emitter
breakdown voltage
Collector-emitter
breakdown voltage
=50mA ;IB=0
I
C
2SD733K
2SD733 160
IC=5mA ;IE=0
2SD733K
160
180
V
V
V
h
Emitter-base breakdown voltage IE=5mA ;IC=0 6 V
(BR)EBO
V
Collector-emitter saturation voltage IC=6A; IB=0.6A 0.7 2.5 V
CEsat
V
Base-emitter on voltage IC=1A ; VCE=5V 1.5 V
BE
I
Collector cut-off current VCB=80V; IE=0 0.1 mA
CBO
I
Emitter cut-off current VEB=4V; IC=0 0.1 mA
EBO
h
DC current gain IC=1A ; VCE=-5V 40 320
FE-1
h
DC current gain IC=5A ; VCE=5V 20
FE-2
fT Transition frequency IC=1A ; VCE=5V 15 MHz
Classifications
FE-1
C D E F
40-80 60-120 100-200 160-320
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD733 2SD733K
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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