Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD732
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·High Current Capability
·Complement to Type 2SB696
APPLICATIONS
·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
= 120V (Min)
=25℃)
a
SYMBOL PARAMETER MAX UNIT
V
V
V
I
CBO
CEO
EBO
I
C
CM
P
C
T
Collector-Base Voltage 150 V
Collector-Emitter Voltage 120 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 8 A
Collector Current-Peak 12 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150 ℃
j
80 W
T
stg
Storage Temperature Range -40~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD732
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
V
BE
I
I
h
(on)
CBO
EBO
FE
f
T
(sat)
Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 120 V
Collector-Base Breakdown Voltage IC= 5mA; IE= 0 150 V
Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 6 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 0.6 V
Base-Emitter On Voltage IC= 1A; VCE= 5V 1.5 V
Collector Cutoff Current VCB= 80V; IE= 0 0.1 mA
Emitter Cutoff Current VEB= 4V; IC= 0 0.1 mA
DC Current Gain IC= 1A; VCE= 5V 40 320
Current-Gain—Bandwidth Product IC= 1A; VCE= 5V 15 MHz
hFE Classifications
C D E F
40-80 60-120 100-200 160-320
isc Website：www.iscsemi.cn
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