Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD728
DESCRIPTION
·With TO-3PN package
·Complement to type 2SB692
APPLICATIONS
·For low frequency power amplifier
and power switching applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 6 A
PC Collector power dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter 150 V
Collector-emitter voltage Open base 150 V
Emitter-base voltage Open collector 5 V
℃)
T
=25℃
C
70 W
℃
T
Storage temperature -55~150
stg
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD728
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=1A ; VCE=5V 7 MHz
COB Collector output capacitance IE=0 ;f=1MHz;VCB=10V 160 pF
Collector-emitter breakdown voltage IC=50mA ;IB=0 150 V
Emitter-base breakdown voltage IE=1mA ;IC=0 5 V
Collector-emitter saturation voltage IC=5A ;IB=0.5A 2.0 V
Collector cut-off current VCB=150V; IE=0 0.1 mA
Emitter cut-off current VEB=5V; IC=0 0.1 mA
DC current gain IC=1A ; VCE=5V 100
DC current gain IC=5A ; VCE=5V 20
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD728
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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