Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPNPower Transistor 2SD726
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·High Power Dissipation
·Complement to Type 2SB690
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
= 80V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
T
stg
Collector-Base Voltage 100 V
Collector-Emitter Voltage 80 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 4 A
Collector Current-Peak 8 A
Total Power Dissipation
C
J
=25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -45~150 ℃
40 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPNPower Transistor 2SD726
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CE
V
BE
I
h
h
C
h
Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 80 V
Emitter-Base Breakdown Voltage IE= 10μA; IC= 0 5 V
Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 2.0 V
Base-Emitter On Voltage IC= 1A; VCE= 5V 1.5 V
Collector Cutoff Current VCB= 80V; IE= 0 0.1 mA
DC Current Gain IC= 1A; VCE= 5V 60 200
DC Current Gain IC= 0.1A; VCE= 5V 35
Collector Output Capacitance IE= 0; VCB= 20V; f= 1MHz 40 pF
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V 10 MHz
Classifications
CBO
FE-1
FE-2
OB
f
T
(sat)
(on)
FE-1
B C
60-120 100-200
isc Website：www.iscsemi.cn
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