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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlington Power Transistor 2SD689
DESCRIPTION
·High DC Current Gain= 1000(Min)@ I
: h
FE
·Collector-Emitter Sustaining Voltage-
: V
CEO(SUS)
= 100V(Min)
·Low Collector-Emitter Saturation Voltage-
: V
= 1.5V(Max)@ I
CE(sat)
·Complement to Type 2SB679
APPLICATIONS
·Low frequency medium power amplifier and medium speed
switching applications
·Pulse motor driver, relay drive and hammer drive applications.
ABSOLUTE MAXIMUM RATINGS (T
= 1A
C
.
= 1A
C
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
C
T
stg
Collector-Base Voltage 100 V
Collector-Emitter Voltage 100 V
Emitter-Base Voltage 10 V
Collector Current-Continuous 1.5 A
Collector Power Dissipation
=25℃
T
C
Junction Temperature 150
j
Storage Temperature Range -55~150
10 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlington Power Transistor 2SD689
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CE(
V
BE(
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 100 V
Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 10 V
Collector-Emitter Saturation Voltage IC= 1A ,IB= 2mA 1.5 V
)
sat
Base-Emitter Saturation Voltage IC= 1A ,IB= 2mA 2.5 V
)
sat
Collector Cutoff Current VCB= 100V, IE= 0 10 μA
Emitter Cutoff Current VEB= 10V; IC= 0 10 μA
DC Current Gain IC= 0.1A ; VCE= 2V 2000
DC Current Gain IC= 1A ; VCE= 2V 1000
Switching Times
t
on
Turn-On Time 0.3 μs
= -IB2= 2mA; VCC= 30V
I
B1
R
t
s
Storage Time 2.0 μs
= 30Ω;PW=20μs;
L
Duty Cycle≤1%
t
f
Fall Time
0.7 μs
isc Website：www.iscsemi.cn
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