Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD687
DESCRIPTION ·
·With
·Low collector saturation voltage
·DARLINGTON
·High DC current gain
APPLICATIONS
·Switching applications
·Hammer drive,pulse motor drive
·Power amplifier applications
PINNING
TO-220C package
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Maximum absolute ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3 A
PC Collector power dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter 60 V
Collector-emitter voltage Open base 40 V
Emitter-base voltage Open collector 5 V
℃)
T
=25℃
C
25 W
℃
T
Storage temperature -50~150
stg
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD687
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Switching times
ton Turn-on time 0.1
ts Storage time 1.0
Collector-emitter breakdown voltage IC=25mA; IB=0 40 V
Collector-emitter saturation voltage IC=2A; IB=4mA 1.5 V
Base-emitter saturation voltage IC=2A; IB=4mA 2.0 V
Collector cut-off current VCB=60V; IE=0 20
Emitter cut-off current VEB=5V; IC=0 2.5 mA
DC current gain IC=1A ; VCE=2V 2000
DC current gain IC=3A ; VCE=2V 1000
I
=-IB2=6mA
B1
=30V;RL=10Ω
V
CC
μA
μs
μs
tf Fall time
2
0.2
μs
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD687
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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