Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD684
DESCRIPTION
·Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·High DC Current Gain : h
FE
·Low Collector-Emitter Saturation Voltage-
: V
CE(sat)
APPLICATIONS
·Igniter applications.
·High voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(T
= 300V(Min)
= 1500(Min.)@IC= 2A
= 2.0V(Max) @IC= 4A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
I
B
C
T
J
stg
Collector-Base Voltage 600 V
Collector-Emitter Voltage 300 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 6 A
B Base Current-Continuous 1 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -65~150 ℃
30 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD684
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE(
V
BE(
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
Switching Times
t
on
Collector-Emitter Sustaining Voltage IC= 0.5A; L= 40mH 300 V
Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA B 2.0 V
)
sat
Base-Emitter Saturation Voltage IC= 4A; IB= 40mA B 2.5 V
)
sat
Collector Cutoff Current VCB= 600V; IE= 0 500 μA
Emitter Cutoff Current VEB= 5V; IC= 0 500 μA
DC Current Gain IC= 2A; VCE= 2V 1500
DC Current Gain IC= 4A; VCE= 2V 200
Collector Output Capacitance
Turn-On Time 1.0 μs
V
= 50V, IE= 0; f
CB
= 1MHz
test
35 pF
I
= 4A; IB1= -IB2= 40mA;
t
s
t
f
Storage Time 8.0 μs
Fall Time
C
= 25Ω,VCC =100V
R
L
5.0 μs
isc Website：www.iscsemi.cn
2
Loading...