Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD683
DESCRIPTION
·Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·High DC Current Gain : h
FE
APPLICATIONS
·High voltage and high power switching applications.
·Motor driver applications.
ABSOLUTE MAXIMUM RATINGS(T
= 400V(Min)
= 500(Min.)@ IC= 5A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
I
B
C
T
stg
Collector-Base Voltage 600 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 15 A
B Base Current 2 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150 ℃
j
Storage Temperature Range -65~150 ℃
150 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD683
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
V
CEO(SUS)
V
CE(
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
V
ECF
C
OB
Switching Times
Collector-Emitter Sustaining Voltage IC= 5A; L= 10mH 400 V
Collector-Emitter Saturation Voltage IC= 10A; IB= 0.2A 2.0 V
sat)
Base-Emitter Saturation Voltage IC= 10A; IB= 0.2A 2.5 V
Collector Cutoff Current VCB= 600V; IE= 0 0.5 mA
Emitter Cutoff Current VEB= 5V; IC= 0 30 mA
DC Current Gain IC= 5A; VCE= 5V 500
DC Current Gain IC= 15A; VCE= 5V 30
C-E Diode Forward Voltage IF= 10A 3.0 V
Output Capacitance
= 50V, IE= 0; f
V
CB
= 1MHz
test
100 pF
t
on
t
s
t
f
Turn-On Time 0.4
Storage Time 15
Fall Time
isc Website：www.iscsemi.cn
VCC=150V; IB1= -IB2= 0.1A
3.0
μs
μs
μs
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