Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistors 2SD673
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·High Power Dissipation: PC= 60W(Max)@TC=25℃
·Complement to Type 2SB653
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
(BR)CEO
= 100V(Min)
=25℃)
a
V
V
V
I
T
CBO
CEO
EBO
I
C
CM
I
B
P
C
T
J
stg
Collector-Base Voltage 120 V
Collector-Emitter Voltage 100 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 7 A
Collector Current-Peak 12 A
B Base Current-Continuous 2 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150
Storage Temperature -55~150
60 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistors 2SD673
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CE
V
BE
I
h
h
h
(sat)
(on)
CBO
FE-1
FE-2
FE-1
Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 100 V
Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 5 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 3.0 V
Base-Emitter On Voltage IC= 1A; VCE= 5V 1.5 V
Collector Cutoff Current VCB= 100V; IE= 0 1 mA
DC Current Gain IC= 1A; VCE= 5V 60 200
DC Current Gain IC= 5A; VCE= 5V 20
Classifications
B C
60-120 100-200
isc Website：www.iscsemi.cn
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