Page 1
2SD669/2SD669A
Lead(Pb)-Free
P b
NPN Epitaxial Planar Transistors
ABSOLUTE MAXIMUM RATINGS(TA=25ºC)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
V
CBO
V
CEO
V
EBO
1. EMITTER
2. COLLECTOR
3. BASE
1
2
3
TO-126C
2SD669 2SD669A Unit
180
120
5.0
180
160
5.0
V
V
V
Collector Current
Power Disspation
Junction Temperature
Storage , Temperature
I
C
P
D
T
j
T
stg
1.5
1.0
150
-55 to +150
A
W
˚C
˚C
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Page 2
2SD669/2SD669A
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage
IC = 1.0mA, IE = 0
Collector-Base Breakdown Voltage
IC = 10mA, IB = 0
2SD669
2SD669A
Emitter-Base Breakdown Voltage
IC = 0, IE = 1.0mA
Collector Cutoff Current
VCB = 160V, IE=0
Emitter Cutoff Current
VEB = 4.0V, IC=0
ON CHARACTERISTICS
DC Current Gain
VCE = 5.0V, IC = 150mA
2SD669
2SD669A
(T
=25°C unless otherwise noted) (Countinued)
A
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
Min Typ Max Unit
180
120
160
5.0
-
-
60
60
-
-
-
-
-
-
-
-
-
10
10
320
200
V
V
V
µA
mA
-
VCE = 5.0V, IC = 500mA
Collector-Emitter Saturation Voltage
IC = 500mA, IB = 50mA
Base-Emitter ON Voltage
V
= 5.0V, IC = 150mA
CE
Transition frequency
VCE = 5.0V, IC = 150mA
Collecotr Output Capacitance
VCB = 10V, IE = 0, f = 1MHz
CLASSIFICATION OF h
FE(1)
Rank
2SD669
Range
2SD669A
B
60-120
60-120
h
FE(2)
V
CE(sat)
V
BE(ON)
f
C
T
ob
30
-
-
-
- -
-
140
1.0
1.5-
-
- -14 pF
C
100-200
D
160-320
100-200 -
V
V
MHz
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Page 3
2SD669/2SD669A
30
)W(
C
P
no
i
20
t
ap
iss
i
d
r
e
wo
10
p
r
o
tc
e
l
lo
C
0 50 100 150
3
)A
(
1.0
C
I
t
ner
0.3
r
uc
r
o
tc
e
l
lo
C
DC Operation(TC = 25°C)
0.1
0.03
0.01
3 3010 3001 100
(13.3 V, 1.5 A)
(40 V, 0.5 A)
2SD669
(120 V, 0.04 A)
(160 V, 0.02A)
2SD669A
Case temperature T
(°C)
C
Fig.1 Maximum Collector Dissipation Curve
1.0
)A
0.8
(
C
I
t
0.6
n
er
r
uc
r
0.4
otcelloC
0.2
0 10 20
5
0
.
.
5
5
5
.
0
4
.
4
5
.3
0
.
3
5
.
2
0
.
2
1
1
.
0
IB = 0
Collector to emitter voltage V
TC = 25°C
P
C
=
2
0
W
5
.
0
.
A
m
5
CE
504030
(V)
Fig.3 Typical Output Characteristecs
300
EF
250
h
oita
200
r
r
e
fs
n
150
ar
t
t
ne
100
rr
uc
C
50
D
VCE = 5 V
1
1 30
C
°
5
7
=
a
T
5
2
5
2
–
Collector current I
(mA)
C
300100103
1,000 3,000
Fig.5 DC Current Transfer Ratio
vs. Collector Current
Collector to emitter voltage V
CE
(V)
Fig.2 Area of Safe Operation
500
VCE = 5 V
200
)Am(
100
C
I tnerruc rotcelloC
50
20
10
5
2
1
0 0.2 0.4 0.6 0.8 1.0
Base to emitter voltage VBE (V)
C
°
5
7
5
5
2
=
2
–
a
T
Fig.4 Typical Transfer Characteristics
)V(
)tas(E
1.2
IC = 10 I
C
V
1.0
e
g
a
tlov n
0.8
o
itar
0.6
u
ta
s
r
e
t
t
0.4
i
m
e
ot
r
0.2
o
t
cel
l
oC
0
1 3 30 30010 100 1,000
B
Collector current I
(mA)
C
C
°
5
7
5
=
2
5
C
2
T
–
Fig.6 Collector to Emitter Saturation Voltage
vs. Collector Current
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Page 4
2SD669/2SD669A
1.2
IC = 10 I
)V(
)
1.0
ON
(EB
V egatlov
0.8
0.6
er ON
0.4
ttime ot esaB
0.2
0
1 3 30 30010 100 1,000
B
°
5
2
–
=
T
C
5
2
5
7
Collector current I
C
(mA)
C
Fig.7 Base to Emitter ON Voltage
vs. Collector Current
200
)Fp
f = 1 MHz
(
I
b
100
o
C
ecnat
50
ica
pac
20
tu
p
10
t
uo
ro
5
tc
e
l
lo
C
2
1 10
Fig.9 Collector Output Capacitance
vs. Collector to Base Voltage
= 0
E
Collector to base voltage V
CB
240
VCE = 5 V
)z
Ta = 25°C
H
200
M
(
T
f
tc
160
u
d
o
r
p
120
htd
i
w
80
dn
ab
ni
40
a
G
0
10 300
Collector current I
Fig.8 Gain Bandwidth Product
vs. Collector Current
100
502052
(V)
(mA)
C
1,00010030
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Page 5
2SD669/2SD669A
TO-126C Outline Dimensions
TO-126C
Dim
A 3.000 3.400
A1 1.800 2.200
b 0.660 0.860
b1 1.170 1.370
c 0.450 0.600
D 7.800 8.200
E 10.800 11.200
e
e1 4.460 4.660
L 15.100 15.500
L1 1.300 1.500
P 4.040 4.240
Φ1 2.700 2.900
Φ2 3.100 3.300
Min Max
2.280 TYP
unit:mm
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