Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD641
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor controls
PINNING (See Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS MAX UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 15 A
ICM Collector current-Peak 30 A
IB Base current 6 A
PT Total power dissipation TC=25℃ 150 W
Tj Junction temperature 200 ℃
Collector-base voltage Open emitter 600 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
T
Storage temperature -65~200 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance from junction to mounting base 1.0
th j-mb
℃/W
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD641
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=5A ; VCE=5V 20 140
fT Transition frequency IC=0.5A ; VCE=10V 4 MHz
COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 150 pF
Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V
Emitter-base breakdown voltage IE=1mA ; IC=0 7 V
Collector-emitter saturation voltage IC=10A; IB=2A 1.5 V
Base-emitter saturation voltage IC=10A; IB=2A 2.0 V
Collector cut-off current VCB=500V; IE=0 0.5 mA
Emitter cut-off current VEB=7V; IC=0 0.1 mA
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD641
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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