Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD640
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·Low Collector-Emitter Saturation Voltage: V
CE(sat)
APPLICATIONS
·High voltage switching applications.
·High power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
= 400V (Min)
= 1.5V (Max.)@ IC= 5A
=25℃)
a
SYMBOL PARAMETER MAX UNIT
V
V
V
T
CBO
CEO
EBO
I
C
I
B
P
C
T
stg
Collector-Base Voltage 600 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 7 A
B Base Current-Continuous 2 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150 ℃
j
Storage Temperature Range -65~150 ℃
100 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD640
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
C
OB
f
T
Switching Times
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 400 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V
Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 2.0 V
Collector Cutoff Current VCB= 500V; IE= 0 0.1 mA
Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA
DC Current Gain IC= 1A; VCE= 5V 25 140
Output Capacitance
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 3 MHz
= 0; VCB= 50V; f
I
E
= 1.0MHz
test
70 pF
t
on
t
stg
t
f
Turn-on Time 1.0
I
Storage Time 3.0
Fall Time
= -IB2= 0.3A; VCC= 200V
B1
0.6
μs
μs
μs
isc Website：www.iscsemi.cn
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