Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD633 2SD635
DESCRIPTION ·
·With
·Complement to type 2SB673/675
·DARLINGTON
·High DC current gain
·Low saturation voltage
APPLICATIONS
·High power switching
·Hammer drive,pulse motor drive
PINNING
TO-220C package
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B Base current 0.7 A
B
P
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector 5 V
Collector current 7 A
Collector dissipation
℃)
2SD633 100
Open emitter
2SD635
2SD633 100
Open base
2SD635
T
=25℃
C
60
60
40 W
V
V
Tj Junction temperature 150
T
stg
Storage temperature -50~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD633 2SD635
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat-1
V
CEsat-2
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter
breakdown voltage
Collector-emitter saturation voltage IC=3A; IB=6mA 1.5 V
Collector-emitter saturation voltage IC=7A; IB=14mA 2.0 V
Base-emitter saturation voltage IC=3A; IB=6mA 2.5 V
Collector
cut-off current
Emitter cut-off current VEB=5V; IC=0 3.0 mA
DC current gain IC=3A ; VCE=3V 2000 15000
DC current gain IC=7A ; VCE=3V 1000
Switching times
2SD633 100
2SD635
=50mA; IB=0
I
C
60
V
2SD633 VCB=100V; IE=0
100 μA
2SD635 V
=60V; IE=0
CB
t
on
t
s
t
f
Turn-on time 0.8 μs
Storage time 3.0 μs
Fall time
IB1=-IB2=6mA
V
=45V;RL=15Ω
CC
2.5 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD633 2SD635
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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