Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD628
DESCRIPTION
·Collector-Emitter Sustaining Voltage : V
CEO(sus)
·High DC Current Gain : h
= 1000(Min.)@IC= 5A
FE
·Low Collector Saturation Voltage: V
CE (sat)
·Complement to Type 2SB638
APPLICATIONS
·Designed for low frequency power amplifier and high current
switching applications.
ABSOLUTE MAXIMUM RATINGS (T
= 100V(Min.)
= 2.0V(Max.)@ IC= 5A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
T
stg
Collector-Base Voltage 100 V
Collector-Emitter Voltage 100 V
Emitter-Base Voltage 7 V
Collector Current-Continunous 10 A
Collector Current-Peak 15 A
B Base Current-Continunous 2 A
Collector Power Dissipation
@TC=25℃
Junction Temperature 150
j
Storage Temperature Range -65~+150
80 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD628
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
= 200mA; RBE= ∞
C
100 V
V
(BR)EBO
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(sat)-1
V
BE
(sat)-2
I
CBO
I
CEO
h
FE
Switching Times
Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA B 2.0 V
Collector-Emitter Saturation Voltage IC= 10A; IB= 100mA 3.0 V
Base-Emitter Saturation Voltage IC= 5A; IB= 10mA B 2.0 V
Base-Emitter Saturation Voltage IC= 10A; IB= 100mA 3.5 V
Collector Cutoff Current VCB= 100V; IE= 0 0.1 mA
Collector Cutoff Current
DC Current Gain IC= 5A, VCE= 3V 1000 20000
V
= 80V; RBE= ∞
CE
1.0
μA
t
on
t
off
Turn-on Time 2
I
= 5A, IB1= -IB2= 10mA
C
Fall Time
isc Website：www.iscsemi.cn
8
μs
μs
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