Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD627
DESCRIPTION
·With TO-3 package
·High voltage,high speed
APPLICATIONS
·For use in horizontal deflection output
stages for color TV receivers
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 6 V
Collector current 3 A
Collector current-peak 6 A
Collector power dissipation TC=25℃ 50 W
℃)
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -45~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD627
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
h
t
Collector-emitter sustaining voltage IC=100mA ;IB=0 600 V
Collector-emitter saturation voltage IC=2.5A; IB=0.6A 10 V
Base-emitter saturation voltage IC=2.5A; IB=0.6A 1.6 V
Collector cut-off current VCB=1000V; IE=0 50
μA
Emitter cut-off current VEB=6V; IC=0 1.0 mA
FE
f
DC current gain IC=2A ; VCE=10V 5 25
Fall time ICP=2.5A 1.0
μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD627
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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