Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD608
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
·Complement to Type 2SB628
APPLICATIONS
·Designed for audio frequency power amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(T
= 160V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
I
B
C
T
J
Collector-Base Voltage 160 V
Collector-Emitter Voltage 160 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 1.5 A
Collector Current-Peak 3.0 A
B Base Current-Continuous 0.3 A
Collector Power Dissipation
@ T
=25℃
a
Collector Power Dissipation
@ T
=25℃
C
Junction Temperature 150 ℃
1.5
W
20
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD608
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CE
V
BE
I
I
h
h
C
h
Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 2.0 V
Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 1.5 V
Collector Cutoff Current VCB= 120V; IE= 0 1.0 μA
Emitter Cutoff Current VEB= 3V; IC= 0 1.0 μA
DC Current Gain IC= 5mA; VCE= 5V 25
DC Current Gain IC= 0.3A; VCE= 5V 40 200
Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz 35 pF
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V 40 MHz
Classifications
CBO
EBO
FE-1
FE-2
OB
f
T
(sat)
(sat)
FE-2
S R Q
40-80 60-120 100-200
isc Website：www.iscsemi.cn
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