Page 1
1
Base
2
Emitter
3
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
Millimeter
Millimeter
Elektronische Bauelemente
FEATURE
Low collector to emitter saturation voltage V
CLASSIFICATION OF h
Product-Rank 2SD602-Q 2SD602-R 2SD602-S
Range 85~170 120~240 170~340
FE (1)
2SD602 / 2SD602A
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
CE(sat)
NPN Plastic-Encapsulate Transistor
SOT-23
Marking Code
WQ1 WR1 WS1
Product-Rank 2SD602A-Q 2SD602A-R 2SD602A-S
Range 85~170 120~240 170~340
Marking Code
XQ XR XS
REF.
A 2.80 3.04 G 0.09 0.18
B 2.10 2.55 H 0.45 0.60
C 1.20 1.40 J 0.08 0.177
D 0.89 1.15 K 0.6 REF.
E 1.78 2.04 L 0.89 1.02
F 0.30 0.50
PACKAGE INFORMATION
Package MPQ LeaderSize
SOT-23 3K 7’ inch
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Ratings Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage V
Collector Current - Continuous IC 500 mA
Collector Power Dissipation PC 200 mW
Thermal Resistance From Junction to Ambient
Junction, Storage Temperature TJ, T
2SD602 30
2SD602A
2SD602 25
2SD602A
(TA = 25°C unless otherwise specified)
V
CBO
V
CEO
5 V
EBO
R
625 °C / W
θJA
150, -55~150 °C
STG
60
50
Min. Max.
REF.
Collector
V
V
Min. Max.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B Page 1 of 3
Page 2
2SD602 / 2SD602A
Elektronische Bauelemente
NPN Plastic-Encapsulate Transistor
ELECTRICAL CHARACTERISTICS
Parameter Symbol Min. Typ. Max. Unit
2SD602 30 - - Collector to Base Breakdown
Voltage
Voltage
Emitter to Base Breakdown Voltage V
Collector Cut-Off Current I
Emitter Cut-Off Current I
DC Current Gain
Collector-Emitter Saturation Voltage V
Transition Frequency fT - 200
2SD602A
2SD602 25 - - Collector to Emitter Breakdown
2SD602A
(TA = 25°C unless otherwise specified)
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CBO
EBO
h
FE (1)
h
FE (2)
CE(sat)
60 - -
50 - -
5 - - V IE=10µA, IC=0
- - 0.1 µA VCB=20V, IE=0
- - 0.1 µA VEB=5V, IC=0
*
85 - 340 VCE=10V, IC=150mA
*
40 - -
*
- - 0.6 V IC=300mA, IB=30mA
V IC=10µA, IE=0
V IC=10mA, IB=0
- MHz VCE=10V, IC=50mA, f=200MHz
Test Conditions
VCE=10V, IC=500mA
Collector Output Capacitance Cob - - 15 pF VCB=10V, IE=0, f=1MHz
*Pulse test: Pulse width≦350µS, duty cycle≦2.0%
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B Page 2 of 3
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
2SD602 / 2SD602A
NPN Plastic-Encapsulate Transistor
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B Page 3 of 3
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