Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD581
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·Collector-Emitter Saturation Voltage : V
CE(sat)
APPLICATIONS
·Designed for 40~60W audio amplifier power output
applications.
ABSOLUTE MAXIMUM RATINGS(T
= 100V(Min.)
= 1.5V(Max.)@ IC= 5A
=25℃)
a
SYMBOL PARAMETER MAX UNIT
V
V
V
I
CBO
CEO
EBO
I
C
CM
I
B
P
C
T
Collector-Base Voltage 150 V
Collector-Emitter Voltage 100 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 7 A
Collector Current-Peak 12 A
B Base Current-Continuous 2 A
Collector Power Dissipation
@TC=25℃
Junction Temperature 150
j
60 W
℃
T
stg
Storage Temperature Range -55~150
isc Website：www.iscsemi.cn
℃
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD581
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
V
h
(BR)CEO
(BR)EBO
CE
(sat)
BE
(on)
I
CBO
h
FE-1
h
FE-2
FE-1
Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 100 V
Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 6 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.5 V
Base-Emitter On Voltage IC= 1A; VCE= 5V 1.5 V
Collector Cutoff Current VCB= 120V; IE= 0 10
DC Current Gain IC= 1A; VCE= 5V 60 200
DC Current Gain IC= 5A; VCE= 5V 25
Classifications
B C
μA
60-120 100-200
isc Website：www.iscsemi.cn
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