Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD5703
DESCRIPTION
·High Breakdown Voltage ：V
CBO
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Designed for color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(T
= 1500V (Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
I
C
C
T
J
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 6 V
Collector Current- Continuous 10 A
Collector Current- Pulse 30 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
70 W
℃
T
stg
Storage Temperature Range -55~150
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD5703
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CE
(sat)
V
BE
(sat)
I
CES
I
CBO
I
CBO
h
FE-1
h
FE-2
t
f
Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A B 5.0 V
Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A B 1.5 V
Collector Cutoff Current VCE= 1400V; VBE= 0 1 mA
Collector Cutoff Current VCB= 800V; IE= 0 10 μA
Collector Cutoff Current VEB= 4V; IC= 0 1 mA
DC Current Gain IC= 1A; VCE= 5V 15 40
DC Current Gain IC= 8A; VCE= 5V 5.3 7.3
I
= 6A, IB1= 1.2A; IB2= -2.4A;
Fall Time
C
VCC= 200V; RL= 33.3Ω
0.3 μs
isc Website：www.iscsemi.cn
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