Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD5702
DESCRIPTION ·
·With TO-3P(H)IS package
·Built-in damper diode
·High voltage ,high speed
APPLICATIONS
·For color display horizontal deflection
output applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 6 A
ICM Collector current-peak 16 A
PC Collector power dissipation
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 6 V
℃)
T
=25℃
C
60 W
Tj
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD5702
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=4A ;IB=0.8A 2.0 5.0 V
CEsat
V
Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V
BEsat
I
Collector cut-off current VCB=800V; IE=0 10 μA
CBO
I
Emitter cut-off current VEB=4V; IC=0 40 200 mA
EBO
h
DC current gain IC=1A ; VCE=5V 10 30
FE-1
h
DC current gain IC=3A ; VCE=5V 5 15
FE-2
fT Transition frequency IC=1A ; VCE=10V 3 MHz
VF
tf
Diode forward voltage I
Fall time
=6A 2.0 V
F
IC=4A ;IB1=0.8A;IB2=-1.6A
VCC=200V; RL=50Ω
0.4 μs
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD5702
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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