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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD568
DESCRIPTION
·High Collector Current:: IC= 7A
·Low Collector Saturation Voltage
: V
CE(sat)
·Complement to Type 2SB707
APPLICATIONS
·Designed for low-frequency power amplifiers and low-speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(T
= 0.5V(Max)@IC= 5A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
I
B
Collector-Base Voltage 80 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 7 A
Collector Current-Peak 15 A
B Base Current-Continuous 3.5 A
Total Power Dissipation
@ T
=25℃
C
C
Total Power Dissipation
@ Ta=25℃
40
2
W
T
T
stg
Junction Temperature 150 ℃
J
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD568
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
V
BE
I
I
h
h
h
(sat)
(sat)
CBO
EBO
FE-1
FE-2
FE-1
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 60 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 0.5 V
Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.5 V
Collector Cutoff Current VCB= 60V; IE= 0 10
Emitter Cutoff Current VEB= 5V; IC= 0 10
DC Current Gain IC= 3A; VCE= 1V 40 200
DC Current Gain IC= 5A; VCE= 1V 20
Classifications
M L K
μA
μA
40-80 60-120 100-200
isc Website：www.iscsemi.cn
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