Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD555
DESCRIPTION
·With TO-3 package
·High power dissipation
·Complement to type 2SB600
APPLICATIONS
·For high speed ,high current ,high power
applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
C
T
j
Collector-base voltage Open emitter 250 V
Collector-emitter voltage Open base 200 V
Emitter-base voltage Open collector 5 V
Collector current 10 A
Collector power dissipation TC=25℃ 200 W
Junction temperature 150 ℃
℃)
T
stg
Storage temperature -55~200 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-C
Thermal resistance junction to case 1.46
℃/W
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD555
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat-1
V
CEsat-2
V
BEsat
I
CBO
I
EBO
h
C
Collector-emitter breakdown voltage IC=50mA ;IB=0 200 V
Emitter-base breakdown voltage IE=1mA ;IC=0 5 V
Collector-emitter saturation voltage IC=5A; IB=0.5A 1.5 V
Collector-emitter saturation voltage IC=10A; IB=2A 5.0 V
Base-emitter saturation voltage IC=5A; IB=0.5A 2.0 V
Collector cut-off current VCB=250V; IE=0 0.1 mA
Emitter cut-off current VEB=5V; IC=0 0.1 mA
FE
OB
f
T
DC current gain IC=2A ; VCE=5V 40 200
Collector output capacitance IE=0 ; VCB=10V;f=1MHz 300 pF
Transition frequency IC=1A ; VCE=10V 15 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD555
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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