Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD552
DESCRIPTION
·With TO-3 package
·Complement to type 2SB552
APPLICATIONS
·Power amplifier applications
·Power switching applications
·DC-DC converters
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B Base current 4 A
B
P
C
Collector-base voltage Open emitter 220 V
Collector-emitter voltage Open base 180 V
Emitter-base voltage Open collector 5 V
Collector current 15 A
Collector power dissipation TC=25℃ 150 W
℃)
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55~200 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD552
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
C
Collector-emitter breakdown voltage IC=25mA ;IB=0 180 V
Collector-emitter saturation voltage IC=10A; IB=1A 2.0 V
Base-emitter saturation voltage IC=10A; IB=1A 2.5 V
Collector cut-off current VCB=220V; IE=0 0.1 mA
Emitter cut-off current VEB=5V; IC=0 0.1 mA
FE
OB
f
T
DC current gain IC=5A ; VCE=5V 25 80
Output capacitance IE=0 ; VCB=10V;f=1.0MHz 160 pF
Transition frequency IC=1A ; VCE=10V 4 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD552
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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