Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD551
DESCRIPTION
·With TO-3 package
·Complement to type 2SB681
·Wide area of safe operation
APPLICATIONS
·For audio frequency power amplifier
applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
Collector-base voltage Open emitter 150 V
Collector-emitter voltage Open base 150 V
Emitter-base voltage Open collector 5 V
Collector current 12 A
Collector current-peak 15 A
Collector power dissipation
℃)
T
=25℃
C
100 W
T
j
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD551
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
I
CBO
I
EBO
h
FE-1
h
FE-2
C
f
BE
OB
T
Collector-emitter breakdown voltage IC=50mA ;IB=0 150 V
Emitter-base breakdown voltage IE=1mA ;IC=0 5 V
Collector-emitter saturation voltage IC=5A; IB=0.5A 2.5 V
Base-emitter on voltage IC=1A ; VCE=5V 1.5 V
Collector cut-off current VCB=150V; IE=0 0.1 mA
Emitter cut-off current VEB=5V; IC=0 0.1 mA
DC current gain IC=1A ; VCE=5V 40 140
DC current gain IC=6A ; VCE=5V 20
Collector output capacitance IE=0; VCB=10V;f=1MHz 250 pF
Transition frequency IC=1A ; VCE=5V 15 MHz
h
Classifications
FE
O R
40-80 70-140
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD551
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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