Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD536
DESCRIPTION
·With TO-3 package
·High voltage,high speed
·Low collector saturation voltage
APPLICATIONS
·Switching regulators
·DC-DC converters
·General purpose power amplifiers
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B Base current 5 A
B
P
C
Collector-base voltage Open emitter 200 V
Collector-emitter voltage Open base 200 V
Emitter-base voltage Open collector 5 V
Collector current 10 A
Collector power dissipation TC=25℃ 100 W
℃)
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD536
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
Collector-emitter sustaining voltage IC=100mA ;IB=0 200 V
Collector-base breakdown voltage IC=0.1mA ;IE=0 200 V
Emitter-base breakdown voltage IE=0.1mA ;IC=0 5 V
Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V
Base-emitter saturation voltage IC=5A; IB=1A 1.5 V
Collector cut-off current VCB=200V; IE=0 0.1 mA
Emitter cut-off current VEB=5V; IC=0 0.1 mA
FE
DC current gain IC=5A ; VCE=5V 50
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD536
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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