Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD531
DESCRIPTION ·
·With TO-220C package
·High current capability
APPLICATIONS
·For audio frequency power amplifier
applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Tc=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
PC Collector power dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 90 V
Emitter-base voltage Open collector 8 V
℃)
T
=25℃
C
43 W
℃
T
Storage temperature -55~150
stg
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD531
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
Collector-emitter breakdown voltage
=50mA; RBE=∞
C
90 V
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
hFE DC current gai n IC=0.1A ; VCE=2V 60
Collector-base breakdown voltage IC=5mA; IE=0 100 V
Emitter-base breakdown votage IE=5mA; IC=0 8 V
Collector-emitter saturation voltage IC=4A;IB=0.4 A 2.0 V
Collector cut-off current VCB=100V; IE=0 0.1 mA
Emitter cut-off current VEB=6V; IC=0 0.1 mA
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD531
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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