Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD523
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·High DC Current Gain : h
= 1000(Min.)@IC= 3A
FE
·Low Collector Saturation Voltage: V
CE (sat)
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS (T
= 80V(Min.)
= 1.5V(Max.)@ IC= 3A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
T
stg
Collector-Base Voltage 80 V
Collector-Emitter Voltage 80 V
Emitter-Base Voltage 5 V
Collector Current-Continunous 7 A
B Base Current-Continunous 0.2 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150
j
Storage Temperature Range -65~+150
50 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD523
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
Switching Times
Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 80 V
Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA B 1.5 V
Collector-Emitter Saturation Voltage IC= 7A; IB= 14mA B 2.0 V
Base-Emitter Saturation Voltage IC= 3A; IB= 6mA B 2.5 V
Collector Cutoff Current VCE= 80V; IB= 0 B 0.1 mA
Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA
DC Current Gain IC= 3A, VCE= 3V 2000 15000
DC Current Gain IC= 7A, VCE= 3V 1000
t
on
t
stg
t
f
Turn-on Time 0.8
Storage Time 3.0
Fall Time
isc Website：www.iscsemi.cn
= 3A, IB1= -IB2=6mA;
I
C
VCC= 45V; RL= 15Ω
2.5
μs
μs
μs
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