Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD5075
DESCRIPTION
·With TO-3PML package
·High breakdown voltage
·High speed switching
APPLICATIONS
·Color TV horizontal output applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3.5 A
ICM Collector current-peak 10 A
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 6 V
℃)
T
PC Collector power dissipation
Tj Junction temperature 150
T
Storage temperature -55~150
stg
=25℃
C
50 W
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD5075
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=2.5A;IB=0.8A 8.0 V
CEsat
V
Base-emitter saturation voltage IC=2.5A;IB=0.8A 1.5 V
BEsat
I
Emitter cut-off current VEB=5V; IC=0 1.0 mA
EBO
I
Collector cut-off current VCB=800V; IE=0 10 μA
CBO
hFE DC current gai n IC=0.5 A ; VCE=5V 8
fT Transition frequency IC=0.5 A ; VCE=10V 3 MHz
tf
Fall time
IC=3A;IB1=0.8A;IB2=-1.6A
VCC=200V;RL=66.7Ω
0.4 μs
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD5075
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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