Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD5074
DESCRIPTION
·High Breakdown Voltage : V
= 1500V (Min)
CBO
·High Switching Speed
·High Reliability
APPLICATIONS
·Designed for color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(T
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
T
J
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 6 V
Collector Current- Continuous 2.5 A
Collector Current-Peak 10 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
50 W
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD5074
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
f
T
t
f
Collector-Emitter Saturation Voltage IC= 2A; IB= 0.6A B 8.0 V
Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A B 1.5 V
Collector Cutoff Current VCB= 800V; IE= 0 10
Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA
DC Current Gain IC= 0.5A; VCE= 5V 8
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 3 MHz
= 2A, IB1= 0.6A; IB2= -1.2A;
I
Fall Time
C
= 100Ω;VCC= 200V
R
L
0.4
μA
μs
isc Website：www.iscsemi.cn
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