Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD5071
DESCRIPTION ·
·With TO-3PML package
·High speed
·High breakdown voltage
·Built-in damper diode
APPLICATIONS
·Color TV horizontal output application
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3.5 A
ICM Collector current-peak 10 A
PC Collector power dissipation TC=25℃ 50 W
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 6 V
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
1
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD5071
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=2.5 A;IB=0.8A 8.0 V
CEsat
V
Base-emitter saturation voltage IC=2.5 A;IB=0.8A 1.5 V
BEsat
I
Collector cut-off current VCB=800V; IE=0 10
CBO
I
Emitter cut-off current VEB=4V; IC=0 40 200 mA
EBO
h
DC current gain IC=0.5A ; VCE=5V 8
FE
fT Transition frequency IC=0.5A ; VCE=10V 3 MHz
VF Diode forward voltage IF=3.5A 2.0 V
tf Fall time
IC=3A;RL=66.7Ω;VCC=200V
=0.8A;IB2=-1.6A
I
B1
0.4
μA
μs
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD5071
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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