Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD476 2SD476A
DESCRIPTION ·
·With TO-220C package
·Complement to type 2SB566/566A
APPLICATIONS
·For low frequency power amplifier
power switching applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Tc=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 4 A
ICM Collector current-peak
Collector-base voltage Open emitter 70 V
Collector-emitter voltage
Emitter-base voltage Open collector 5 V
℃)
2SD476 50
2SD476A
Open base
60
8 A
V
T
PC Collector power dissipation
Tj Junction temperature 150
T
Storage temperature -55~150
stg
=25℃
C
40 W
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD476 2SD476A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CBO
Collector-base breakdown voltage
=10μA ; IE=0
C
70 V
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
h
FE-1
h
FE-2
fT Transition frequency IC=0.5A ; VCE=4V 7 MHz
Switching times
ton Turn-on time 0.3
Collector-emitter
breakdown voltage
Emitter-base breakdown votage
Collector-emitter saturation voltage IC=2 A;IB=0.2 A 1.0 V
Base-emitter saturation voltage IC=2 A;IB=0.2 A 1.2 V
Collector cut-off current VCB=50V; IE=0 1
DC current gain IC=0.1A ; VCE=4V 35
DC current gain IC=1A ; VCE=4V 60 200
2SD476 50
=50mA; RBE=∞
2SD476A
I
C
I
=10μA; IC=0
E
60
5 V
V
μA
μs
t
Turn-off time 3.0
off
t
Storage time
stg
h
classifications
FE-2
B C
60-120 100-200
2
IC=0.5A ; VCC=10.5V
=-IB2=0.05 A
I
B1
2.5
μs
μs
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD476 2SD476A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Page 4
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD476 2SD476A
4
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