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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistors 2SD458
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·High Power Dissipation: P
APPLICATIONS
·Designed for high power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= 400V(Min)
(BR)CEO
= 80W(Max)@TC=25℃
C
=25℃)
a
V
V
V
V
I
I
CBO
CER
CEO
EBO
I
C
CM
I
B
BM
P
C
T
J
Collector-Base Voltage 600 V
Collector-Emitter Voltage RBE= 50Ω
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 5 A
Collector Current-Peak 10 A
B Base Current-Continuous 2 A
Base Current-Peak 3 A
Collector Power Dissipation
@TC=25℃
Junction Temperature 150
600 V
80 W
℃
T
stg
Storage Temperature -65~150
isc Website：www.iscsemi.cn
℃
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistors 2SD458
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CE
V
BE
I
CER
h
(sat)
(sat)
FE
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 400 V
Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V
Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 3.0 V
Collector Cutoff Current
DC Current Gain IC= 5A; VCE= 5V 6.5 50
hFE Classifications
Q R
15-50 6.5-30
V
= 600V; RBE= 50Ω
CE
1.0 mA
isc Website：www.iscsemi.cn
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