Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD437
DESCRIPTION ·
·With TO-3 package
·High voltage
·Fast switching speed
APPLICATIONS
·For switching regulator and power
amplifier applications
PINNING(see fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
ICM Collector current-peak 15 A
PT Total power dissipation TC=25℃ 80 W
Base
Fig.1 simplified outline (TO-3) and symbol
Collector-base voltage Open emitter 600 V
Collector-emitter voltage Open base 350 V
Emitter-base voltage Open collector 6 V
Tj Junction temperature 150 ℃
T
Storage temperature -65~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD437
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat-1
V
CEsat-2
V
BEsat-1
V
BEsat-2
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter sustaining voltage IC=0.1A; IB=0 350 V
Emitter-base breakdown voltage IE=10mA; IC=0 6 V
Collector-emitter saturation voltage IC=5 A;IB=1 A 1.5 V
Collector-emitter saturation voltage IC=8 A;IB=2.5 A 3.0 V
Base-emitter saturation voltage IC=5 A;IB=1 A 1.4 V
Base-emitter saturation voltage IC=8 A;IB=2.5 A 1.8 V
Collector cut-off current VCB=600V;IE=0 0.1 mA
Emitter cut-off current VEB=6V; IC=0 0.1 mA
DC current gain IC=1A ; VCE=5V 15 50
DC current gain IC=6A ; VCE=5V 10
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD437
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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