Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistors 2SD427
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·High Power Dissipation: P
·Complement to Type 2SB557
APPLICATIONS
·Designed for power amplifier applications.
·Recommended for 50W high-fidelity audio frequency
amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= 120V(Min)
(BR)CEO
= 80W(Max)@TC=25℃
C
=25℃)
a
V
V
V
T
CBO
CEO
EBO
I
C
I
E
P
C
T
J
stg
Collector-Base Voltage 120 V
Collector-Emitter Voltage 120 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 8 A
Emitter Current-Continuous -8 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150
Storage Temperature -65~150
80 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistors 2SD427
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CE
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
C
(sat)
OB
f
T
(on)
Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0 120 V
Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 5 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.5 V
Base-Emitter On Voltage IC= 5A; VCE= 5V 2.0 V
Collector Cutoff Current VCB= 60V; IE= 0 0.1 mA
Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA
DC Current Gain IC= 1A; VCE= 5V 40 140
DC Current Gain IC= 5A; VCE= 5V 20
Output Capacitance IE= 0; VCB= 10V; f= 1MHz 170 pF
Current-Gain—Bandwidth Product IC= 1A; VCE= 5V 5 MHz
h
Classifications
FE-1
R O
40-80 70-140
isc Website：www.iscsemi.cn
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