Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD425 2SD426
DESCRIPTION
·With TO-3 package
·Complement to type 2SB555/556
·High power dissipation
APPLICATIONS
·Power amplifier applications
·Recommended for high-power high-fidelity
audio frequency amplifier output stage
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SD425 140
V
CBO
V
CEO
V
EBO
IC Collector current 12 A
IE Emitter current 12 A
Collector-base voltage
2SD426
2SD425 140
Collector-emitter voltage
2SD426
Emitter-base voltage Open collector 5 V
Open emitter
Open base
V
120
V
120
T
PC Collector power dissipation
Tj Junction temperature 150
T
Storage temperature -65~150
stg
=25℃
C
100 W
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD425 2SD426
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2SD425 140
V
(BR)CEO
Collector-emitter
breakdown voltage
2SD426
=0.1A ;IB=0
I
C
V
120
V
Emitter-base breakdown voltage IE=10mA ;IC=0 5 V
(BR)EBO
2SD425 IC=7A; IB=0.7A
V
CEsat
V
BE
I
CBO
I
EBO
hFE DC current gain IC=2A ; VCE=5V 40 140
fT Transition frequency IC=2A ; VCE=5V 5 MHz
Collector-emitter
saturation voltage
2SD426 I
Base-emitter on voltage IC=7A ; VCE=5V 2.5 V
Collector cut-off current VCB=50V; IE=0 0.1 mA
Emitter cut-off current VEB=5V; IC=0 0.1 mA
=6A; IB=0.6A
C
3.0 V
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD425 2SD426
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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