Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD424
DESCRIPTION
·With TO-3 package
·Complement to type 2SB554
·High power dissipation
·High collector-emitter breakdown voltage
: V
=180V(min)
CEO
APPLICATIONS
·Power amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 15 A
IB Base current 1.5 A
PC Collector power dissipation
Collector-base voltage Open emitter 180 V
Collector-emitter voltage Open base 180 V
Emitter-base voltage Open collector 5 V
℃)
T
=25℃
C
150 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD424
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
VBE Base-emitter on voltage IC=10A ; VCE=5V 2.5 V
I
CBO
I
EBO
hFE DC current gai n IC=2A ; VCE=5V 40 140
COB Output capacitance IE=0 ; VCB=10V;f=1.0MHz 300 pF
fT Transition frequency IC=2A ; VCE=5V 5 MHz
Collector-emitter breakdown voltage IC=0.1A ;IB=0 180 V
Emitter-base breakdown voltage IE=10mA ;IC=0 5 V
Collector-emitter saturation voltage IC=10A; IB=1A 3.0 V
Collector cut-off current VCB=90V; IE=0 0.1 mA
Emitter cut-off current VEB=5V; IC=0 0.1 mA
h
Classifications
FE
R O
40-80 70-140
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD424
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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