Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD402
DESCRIPTION ·
·With
·Complement to type 2SB547
·High breakdown voltage
APPLICATIONS
·Designed for use in line-operated color
PINNING
TO-220C package
TV vertical deflection of complementary
symmetry circuit
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 2.0 A
ICM Collector current-Peak 3.0 A
IB Base current 1.5 A
PC Collector dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter 200 V
Collector-emitter voltage Open base 150 V
Emitter-base voltage Open collector 5 V
T
=25℃
C
20 W
℃
T
Storage temperature -50~150
stg
THERMAL CHARACTERISTICS
SYMBOL CHARACTERISTICS MAX UNIT
Rθjc Thermal resistance junction to case 4.16 ℃/W
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD402
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
fT Transition frequency IC=0.4A ; VCE=10V 7 MHz
CC Collector capacitance IE=0 ; VCB=10V;f=1.0MHz 45 pF
Collector-emitter breakdown voltage IC=25mA; IB=0 150 V
Emitter-base breakdown voltage IE=1mA; IC=0 5 V
Collector-emitter saturation voltage IC=0.5A; IB=50mA 2.0 V
Collector cut-off current VCB=150V; IE=0 50 μA
Emitter cut-off current VEB=4V; IC=0 50 μA
DC current gain IC=0.4A ; VCE=10V 40
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD402
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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