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固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD388
DESCRIPTION
·With TO-3 package
·High power dissipation
APPLICATIONS
·For use in power amplifier applications
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
PC Collector power dissipation TC=25℃ 80 W
Base
Fig.1 simplified outline (TO-3) and symbol
℃)
Collector-base voltage Open emitter 150 V
Collector-emitter voltage Open base 140 V
Emitter-base voltage Open collector 7 V
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD388
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=1A ; VCE=10V 9 MHz
Collector-emitter sustaining voltage IC=0.2A ;IB=0 140 V
Emitter-base breakdown voltage IE=10mA ;IC=0 7 V
Collector-emitter saturation voltage IC=6A; IB=0.6A 2.0 V
Base-emitter saturation voltage IC=6A; IB=0.6A 2.5 V
Collector cut-off current VCB=150V; IE=0 0.1 mA
Emitter cut-off current VEB=7V; IC=0 0.1 mA
DC current gain IC=1A ; VCE=5V 50
DC current gain IC=5A ; VCE=5V 20
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD388
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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