Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD386 2SD386A
DESCRIPTION ·
·With
·High voltage :V
APPLICATIONS
·For TV vertical deflection output
PINNING
TO-220C package
=200V(min)
CBO
applications
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current
ICM Collector current-Peak 10 A
Collector-base voltage Open emitter 200 V
Collector-emitter voltage
Emitter-base voltage Open collector 6 V
℃)
2SD386 120
Open base
2SD386A
2SD386 3
2SD386A
150
2
V
A
TC=25℃
PC Collector dissipation
Ta=25℃
Tj Junction temperature 150
T
Storage temperature -40~150
stg
25
W
1.75
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD386 2SD386A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gain IC=0.5A ; VCE=2V 40 320
fT Transition frequency IC=0.5A ; VCE=5V 8 MHz
Collector-emitter
breakdown voltage
Collector-emitter
saturation voltage
Base-emitter saturation voltage IC=1A; IB=0.1A 1.8 V
Collector cut-off current VCB=180V; IE=0 1.0 mA
Emitter cut-off current VEB=5V; IC=0 5.0 mA
2SD386 120
IC=25mA; IB=0
2SD386A
2SD386 1.0
=1A; IB=0.1A
I
C
2SD386A
150
V
1.5
h
Classifications
FE
C D E F
V
40-80 60-120 100-200 160-320
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD386 2SD386A
PACKAGE OUTLINE
3
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
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