Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD380
DESCRIPTION
·High Breakdown Voltage : V
= 1500V (Min)
CBO
·High Switching Speed
APPLICATIONS
·Designed for line-operated horizontal deflection output
applications.
ABSOLUTE MAXIMUM RATINGS(T
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
V
I
I
P
CBO
CES
CEO
EBO
I
C
CM
BM
C
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 1500 V
Collector-Emitter Voltage 700 V
Emitter-Base Voltage 5 V
Collector Current- Continuous 5 A
Collector Current-Peak 7 A
Base Current-Peak 3.5 A
Collector Power Dissipation
≤90℃
@ T
C
50 W
T
J
T
stg
Junction Temperature 130
Storage Temperature Range -65~130
isc Website：www.iscsemi.cn
℃
℃
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD380
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CE
V
BE
I
CBO
h
FE
t
t
stg
(sat)
(sat)
f
Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 5 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 10 V
Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.6 V
VCB= 750V ; IE= 0 100 μA
Collector Cutoff Current
= 1500V ; IE= 0
V
CB
DC Current Gain IC= 5A ; VCE= 10V 5 15
Fall Time 0.9 μs
I
Storage Time
= 5A, I
C
= 1.5A, LB= 5μH
B
end
1 mA
11 μs
isc Website：www.iscsemi.cn
2
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