Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD363
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
·Collector Power Dissipation : P
= 40W(Max)@ TC= 25℃
C
APPLICATIONS
·Designed for B/W TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T
= 120V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
C
T
J
stg
Collector-Base Voltage 300 V
Collector-Emitter Voltage 120 V
Emitter-Base Voltage 8 V
Collector Current-Continuous 6 A
Collector Power Dissipation
@ TC=25℃
Junction Temperature 150
Storage Temperature Range -55~150
40 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD363
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
h
FE
f
T
Collector-Emitter Breakdown Voltage IC= 20mA; IB= 0 120 V
Collector-Base Breakdown Voltage IC= 1mA; IE= 0 300 V
Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 8 V
Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 1.0 V
Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 1.5 V
Collector Cutoff Current VCB= 250V; IE= 0 1.0 mA
DC Current Gain IC= 1A; VCE= 5V 40 240
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V 10 MHz
hFE Classifications
R O Y
40-80 70-140 120-240
isc Website：www.iscsemi.cn
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