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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SD334
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
(BR)CEO
= 80V (Min)
=25℃)
a
: V
·Wide Area of Safe Operation
APPLICATIONS
·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER MAX UNIT
V
V
V
T
CBO
CEO
EBO
I
C
I
B
P
C
T
stg
Collector-Base Voltage 110 V
Collector-Emitter Voltage 80 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 6 A
B Base Current-Continuous 3 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150
j
Storage Temperature Range -65~150
75 W
℃
℃
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SD334
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CE
V
BE
I
h
(sat)
(on)
CBO
FE
Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 80 V
Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 7 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2 V
Base-Emitter On Voltage IC= 1A ; VCE= 4V 2.5 V
Collector Cutoff Current
DC Current Gain IC= 1A ; VCE= 4V 40 260
hFE Classifications
R O Y
VCB= 40V; IE= 0 50 μA
V
= 110V; IE= 0
CB
1 mA
40-80 70-150 130-260
isc Website：www.iscsemi.cn
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