
Transistors
Low frequency amplifier, strobe
2SD2687S
zApplication
Low frequency amplifier
Storobo
zFeatures
1) A collector current is large.
2) V
At lc=1.5A / l
CE(sat)
≤ 250mV
=30mA
B
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power siddipation
Junction temperature
Range of storage temperature
Single pulse, Pw=10ms
∗
Symbol
CBO
V
V
CEO
V
EBO
I
C
I
CP
P
C
t
j
t
stg
Limits
15
12
6
5
8
400
150
−55 to +150
zElectrical characteristics (T a=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
CBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulse
BV
CEO
BV
EBO
BV
CBO
I
EBO
I
V
CE(sat)
FE
h
T
f
Cob − 30 −
zDimensions (Unit : mm)
(1)Emitter(GND)
(2)Collector(OUT)
(3)Base(IN)
Unit
V
V
V
A
∗
A
mW
°C
°C
15
12
6
−−
−−
− 120
350 − 680
−
−−
−−
−−
100
100
250 mV
360
−
V
I
V
I
V
I
nA VCB=15V
nA VEB=6V
IC=1.5A, IB=30mA
− V
MHz
VCE=2V, IE=−500mA, f=100MHz
V
pF
Taping specifications
C
=10µA
C
=1mA
E
=10µA
CE
=2V, IC=500mA
CB
=10V, IE=0A, f=1MHz
2SD2687S
∗
∗
Rev.A 1/2

Transistors
zPackaging specifications
package
Type
2SD2687S
zElectrical characteristic curves
10
(A)
C
0.1
0.01
COLLECTOR CURRENT :I
0.001
Fig.1 Grounded emitter propagation
characteristics
Code
Basic ordering unit (pieces)
Ta=100 C
1
0.1 1 10
BASE TO EMITTER CURRENT : VBE (V)
Ta=25 C
Ta= −45 C
Ic/IB=20/1
Pulsed
Taping
TP
5000
1000
FE
100
DC CURRENT GAIN : h
10
0.001 0.01 0.1 1 10
Ta=100 C
Ta=25 C
Ta=40 C
COLLECTOR CURRENT : IC (A)
Fig.2 DC current gain
vs. collector current
VCE=−2V
Pulsed
2SD2687S
10
Ic/IB=20/1
CE
=2V
(V)
CE(sat)
1
0.1
V
Pulsed
Ta=100 C
Ta=25 C
Ta= −45 C
COLLECTOR TO EMITTER
SATURATION VOLTAGE : V
0.01
0.001 0.01 0.1 1
COLLECTOR CURRENT : Ic (A)
Fig.3 Collector-emitter saturation voltage
vs. collector current
10
10
(V)
BE(sat)
IC/IB=50/1
1
IC/IB=20/1
BASE SATURATION VOLTAGE : V
0.1
0.001 0.01 0.1 1 10
IC/IB=10/1
COLLECTOR CURRENT : Ic (A)
Fig.4 Base-emitter saturation voltage
vs.collector current
Ta=25 C
Pulsed
1000
100
TRANSITION FREQUENCY : fT (MHz)
10
0.01 0.1 1 10
EMITTER CURRENT : IE (A)
Fig.5 Gain bandwidth product
vs. emitter current
Ta=25 C
CE
=−2V
V
f= 100MHz
1000
(V)
BE(sat)
100
COLLECTOR TO EMITTER
SATURATION VOLTAGE : V
10
0.001 0.01 0.1 1 10 100
EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : V
Fig.6 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Ic=0A
f=1MHz
25 C
Ta=
Cib
Cob
CB
(V)
Rev.A 2/2

Appendix
Notes
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Application circuit diagrams and circuit constants contained herein are shown as examples of standard
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The products listed in this document are designed to be used with ordinary electronic equipment or devices
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It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
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Appendix1-Rev2.0