Page 1
Transistors
z
z
z
z
z
z
2A / 30V Bipolar transistor
2SD2679
z
Applications!!!!!!!!!!!!!!!!!! zDimensions (Unit : mm)
Low frequency amplification, driver
Features
1) Collector current is high.
2) Low collector-emitter saturation voltage.
(V
CE(sat) d 350mV at IC= 1.5A, IB= 75mA)
Structure
NPN epitaxial planar si licon transistor
MPT3
(1)Base
(2)Collector
(3)Emitter
Abbreviated symbol : XZ
2SD2679
Absolute maximum ratings (T a=25qC)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Power dissipation
Junction temperature
Storage temperature
∗1 Pw=1ms, single pulse.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 40×40×0.7mm ceramic board.
z
Electrical characteristics (Ta=25qC)
Parameter Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Pulsed
Symbol
CBO
V
V
CEO
V
EBO
I
C
CP
I
C
P
tj
tstg
Limits
150
−55 to +150
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
30
30
6
2
4
0.5
2
∗1
∗2
∗3
Min.
30
30
6
−
−
−
270
−
−
Unit
V
V
V
A
W
°C
°C
Typ.
−
−
−
−
−
180
−
280
20
Max.
−
−
−
100
100
370
680
−
−
Packaging specifications
Package MPT3
Packaging type
Code
Part No.
2SD2679
Unit
V
nA
mV
−
MHz
pF
C
=1mA
I
C
=10μA
I
E
=10μA
I
CB
V
V
EB
I
C/IB
CE
V
CE
V
CB
V
Basic ordering unit (pieces)
=30V
=6V
=1.5A/75mA
=2V, IC=200mA
=2V, IE= −200mA , f=100MHz
=10V , IE=0mA , f=1MHz
Taping
T100
1000
Rev.A 1/2
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Transistors
z
Electrical characteristics curves
10
VCE=−2V
Pulsed
(A)
C
1
Ta=125 C
Ta=25 C
0.1
0.01
Ta=−25 C
COLLECTOR CURRENT : I
0.001
01.4
0.2
0.6 0.8
0.4
1.2
1
BASE TO EMITTER CURRENT : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
1000
Ta=125 C
FE
100
Ta=25 C
Ta=−25 C
DC CURRENT GAIN : h
10
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : IC(A)
Fig.2 DC current gain
vs. collector current
VCE=−2V
Pulsed
2SD2679
10
(V)
IC/IB=20/1
Pulsed
CE(sat)
1
Ta=−25 C
Ta=25 C
0.1
0.01
0.001 0.01 0.1 1
COLLECTOR SATURATION VOLTAGE : V
Fig.3 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
Ta=125 C
10
COLLECTOR CURRENT : IC (A)
10
(V)
BE(sat)
IC/IB=20/1
Pulsed
Ta=−25 C
Ta=25 C
1
0.1
BASE SATURATION VOLTAGE : V
0.001 0.01 0.1 1 10
Ta=125 C
COLLECTOR CURRENT : IC (A)
Fig.4 Base-emitter saturation voltage
vs. collector current
1000
(MHz)
T
100
TRANSITION FREQUENCY : f
10
0.01 0.1 1 10
EMITTER CURRENT : IE (A)
Fig.5 Gain bandwidth product
vs. emitter current
Ta=25 C
CE
=−2V
V
f= 100MHz
1000
Cob
100
IC=0A
f=1MHz
Ta=25 C
Cib
10
0.001 0.01 0.1 1 10 100
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : V
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EB
(V)
Fig.6 Collector output chapacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.A 2/2
Page 3
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
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that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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ROHM CO., LTD. is granted to any such buyer.
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(such as audio visual equipment, office-automation equipment, communications devices, electrical
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and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
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order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
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Appendix1-Rev2.0
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