Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2578
DESCRIPTION ·
·With TO-3PML package
·High speed
·High breakdown voltage
·Built-in damper diode
APPLICATIONS
·Color TV horizontal deflection output
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
ICM Collector current-peak 20 A
PC Collector power dissipation
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 6 V
℃)
TC=25℃
3
60
W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
1
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2578
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CES
I
EBO
h
FE-1
h
FE-2
tf Fall time
Collector-emitter sustaining voltage IC=100mA; IB=0 800 V
Collector-emitter saturation voltage IC=5 A;IB=1A 5 V
Base-emitter saturation voltage IC=5 A;IB=1A 1.5 V
Collector cut-off current VCB=800V; IE=0 10
Collector cut-off current VCB=1500V; RBE=0 1.0 mA
Emitter cut-off current VEB=4V; IC=0 40 130 mA
DC current gain IC=5A ; VCE=5V 5 8
DC current gain IC=1A ; VCE=5V 15 30
IC=4A;RL=50Ω
=0.8A;IB2=-1.6A;VCC=200V
I
B1
0.3
μA
μs
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2578
PACKAGE OUTLINE
3
Fig.2 Outline dimensions
Page 4
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2578
4
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