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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD2562
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·High DC Current Gain: hFE= 5000( Min.) @(IC= 10A, VCE= 4V)
·Low Collector Saturation Voltage: V
·Complement to Type 2SB1649
APPLICATIONS
·Designed for series regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= 150V(Min)
(BR)CEO
= 2.5V(Max)@ (IC= 10A, IB= 10mA)
CE(sat)
B
=25℃)
a
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
stg
Collector-Base Voltage 150 V
Collector-Emitter Voltage 150 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 15 A
Base Current-Continuous 1 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150
Storage Temperature -55~150
85 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD2562
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
C
OB
f
T
Switching Times
t
on
Collector-Emitter Breakdown Voltage IC= 30mA, IB= 0 150 V
Collector-Emitter Saturation Voltage IC= 10A ,IB= 10mA 2.5 V
Base-Emitter Saturation Voltage IC= 10A ,IB= 10mA 3.0 V
Collector Cutoff current VCB= 150V, IE= 0 0.1 mA
Emitter Cutoff current VEB= 5V, IC= 0 0.1 mA
DC Current Gain IC= 10A; VCE= 4V 5000
Output Capacitance
Current-Gain—Bandwidth Product IE= -2A; VCE= 12V 70 MHz
Turn-on Time 0.8 μs
I
= 0; VCB= 10V; f
E
= 1MHz
test
120 pF
t
stg
t
f
Storage Time 4.0 μs
Fall Time
hFE Classifications
O P Y
5000-12000 6500-20000 15000-30000
V
= 40V, RL= 4Ω,
CC
= 10A; IB1= -IB2= 10mA
I
C
1.2 μs
isc Website：www.iscsemi.cn
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