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固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2553
DESCRIPTION
·With TO-3P(H)IS package
·High voltage;high speed
·Low saturation voltage
·Bult-in damper diode
APPLICATIONS
·Horizontal deflection output for high
resolution display,color TV
·High speed switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
ICM Collector current-peak 16 A
IB Base current 4 A
Collector-base voltage Open emitter 1700 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 5 V
T
PC Total power dissipation
Tj Junction temperature 150
T
Storage temperature -55~150
stg
=25℃
C
50 W
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2553
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
VF Diode forward voltage IF=8A 1.6 2.0 V
Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz 155 pF
fT Transition frequency IC=0.1A ; VCE=10V 2 MHz
Switching times :
Emitter-base breakdown voltage IC=400mA ;IB=0 5 V
Collector-emitt er saturation voltage IC=6A; IB=1.2A 5 V
Base-emitter saturation voltage IC=6A; IB=1.2A 0.9 1.2 V
Collector cut-off current VCB=1700V; IE=0 1 mA
Emitter cut-off current VEB=5V; IC=0 66 200 mA
DC current gain IC=1A ; VCE=5V 8 28
DC current gain IC=6A ; VCE=5V 5 9
ts Storage time 9 12
tf Fall time
2
=6A;IB1=1.5A
I
CP
=15.75kHz
f
H
0.3 0.7
μs
μs
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2553
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
Page 4
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2553
4
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