Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD2551
DESCRIPTION
·High Breakdown Voltage ：V
·High Switching Speed
·Low Saturation Voltage
·Built-in Damper Diode
APPLICATIONS
·Designed for color TV horizontal deflection applications.
ABSOLUTE MAXIMUM RATINGS(T
= 1700V (Min)
CBO
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
I
B
C
T
J
Collector-Base Voltage 1700 V
Collector-Emitter Voltage 600 V
Emitter-Base Voltage 5 V
Collector Current- Continuous 5 A
Collector Current- Pulse 10 A
B Base Current- Continuous 2.5 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
50 W
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD2551
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
V
ECF
f
T
Emitter-Base Breakdown Voltage IE= 300mA; IC= 0 5 V
Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 5.0 V
Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.5 V
Collector Cutoff Current VCB= 1700V; IE= 0 1.0 mA
Emitter Cutoff Current VEB= 5V; IC= 0 66 200 mA
DC Current Gain IC= 1A; VCE= 5V 8 28
DC Current Gain IC= 4A; VCE= 5V 5 10
C-E Diode Forward Voltage IF= 5A 2.0 V
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 3 MHz
C
OB
Switching Times
t
s
t
f
Output Capacitance
Storage Time 10 μs
Fall Time
I
= 0; VCB= 10V; f
E
ICP= 4A, I
fH= 15.75kHz
B1(
end
test
= 0.8A,
)
=1.0MHz
125 pF
1.0 μs
isc Website：www.iscsemi.cn
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