Datasheet 2SD2544 Datasheet (Panasonic)

Po wer Transistors

2SD2544

Silicon NPN triple diffusion planar type

For power amplification with high forward current transfer ratio

Features

■

●

High foward current transfer ratio h

●

Satisfactory linearity of foward current transfer ratio h

●

Allowing supply with the radial taping

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation

TC=25°C Ta=25°C

Junction temperature Storage temperature

Electrical Characteristics (T

■

Parameter

Collector cutoff current Emitter cutoff current Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time

Symbol

V V V I

CP

I

C

P

C

T

j

T

stg

CBO

CEO

EBO

C

Symbol

I

CBO

I

EBO

V

CEO

*

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

FE

=25˚C)

C

Ratings

60 60

7 8 4

15

2

150

–55 to +150

=25˚C)

FE

Unit

V V V A A

W

˚C ˚C

Conditions

VCB = 60V, IE = 0 VEB = 7V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.8A VCE = 2V, IC = 2A IC = 2A, IB = 50mA IC = 2A, IB = 50mA VCE = 10V, IC = 0.5A, f = 10MHz

IC = 2A, IB1 = 50mA, IB2 = –50mA, VCC = 50V

4.2±0.2

13.0±0.2

18.0±0.5 Solder Dip

C1.0

123

2.5±0.2 2.5±0.2

min

60

500

60

0.65±0.1

1.05±0.10.35±0.1

0.55±0.1

typ

1000

70

0.5

3.6

1.1

2.5±0.2

1.2±0.1

Unit: mm

5.0±0.1

1.010.0±0.2

90°

C1.0

2.25±0.2

0.55±0.1

1:Base 2:Collector 3:Emitter

MT4 Type Package

max

Unit

10 10

µA µA

V

2000

0.5

1.5

V V

MHz

µs µs µs

*

h

Rank classification

FE1

Rank Q P

h

500 to 1200 800 to 2000

FE1

1

Po wer Transistors 2SD2544

PC—Ta IC—V

20

) W

(

C

15

10

5

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

10

V

(

3

CE(sat)

1

0.3

(1) TC=Ta (2) Without heat sink

(1)

(2)

V

CE(sat)—IC

=2.0W)

(P

C

TC=100˚C

IC/IB=20

CE

8

7

)

6

A

(

C

5

4

3

2

Collector current I

1

0

012108264

)

Collector to emitter voltage VCE (V

10

3

FE

1

0.3

0.1

TC=100˚C

IB=100mA

hFE—I

–25˚C

TC=25˚C

50mA

20mA

10mA

6mA

4mA

2mA

)

C

VCE=5V

25˚C

10

) V

(

BE(sat)

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

1000

)

300

MHz

(

T

100

30

V

BE(sat)—IC

IC/IB=20

3

TC=–25˚C

1

100˚C

25˚C

0.1 0.3 1 3 10

Collector current IC (A

fT—I

C

)

VCE=10V f=10MHz T

=25˚C

C

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

–25˚C

Collector current IC (A

Cob—V

1000

) pF

(

300

ob

100

30

10

3

CB

25˚C

)

IE=0 f=1MHz

=25˚C

T

C

Collector output capacitance C

1

1 3 10 30 100

Collector to base voltage VCB (V

0.03

0.01

Forward current transfer ratio h

0.003

0.001

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

Area of safe operation (ASO)

100

30

)

I

CP

10

A

(

I

C

3

DC

1

0.3

0.1

Collector current I

0.03

0.01 1 10 100 10003 30 300

)

Collector to emitter voltage VCE (V

10ms

)

Non repetitive pulse T

=25˚C

C

t=1ms

10

3

Transition frequency f

1

0.01 0.1 1 100.03 0.3 3

)

Collector current IC (A

)

2

Po wer Transistors 2SD2544

R

—t

th(t)

10000

)

1000

˚C/W

( (t)

th

100

10

1

Thermal resistance R

0.1

–4

10

–3

Note: Rth was measured at Ta=25˚C and under natural convection.

(1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink

–1

–2

10

Time t (s

1010

110

10

)

3

2

(1) (2)

4

10

3